Short-Gate Tunneling Field Effect Transistor Having Non-Uniformly Doped Vertical Channel and Fabrication Method Thereof

摘要

The present invention discloses a short-gate tunneling field effect transistor having a non-uniformly doped vertical channel and a fabrication method thereof. The short-gate tunneling field effect transistor has a vertical channel and the channel region is doped in such a slowly-varied and non-uniform manner that a doping concentration in the channel region appears a Gaussian distribution along a vertical direction and the doping concentration in the channel near the drain region is higher while the doping concentration in the channel near the source region is lower; and double control gates are formed at both sides of the vertical channel and the control gates form an L-shaped short-gate structure, so that a gate underlapped region is formed in the channel near the drain region, and a gate overlapped region is formed at the source region. As compared with a conventional TFET, the short-gate tunneling field effect transistor according to the present invention can effectively suppress the impact of the electrical field at the drain region on the tunneling width of the tunneling junction at the source region; the super exponential relationship between the output tunneling current and the drain voltage is weakened; and the output characteristic of the transistor is significantly improved. Meanwhile, the tunneling field effect transistor is beneficial to increase the on-current of the transistor and to gain a steeper sub-threshold slope.

主权项

1. A short-gate tunneling field effect transistor having a non-uniformly doped vertical channel, comprising a source region, a drain region, a channel region and a control gate, wherein the transistor has the vertical channel and the channel region is doped in such a slowly-varied and non-uniform manner that a doping concentration in the channel region appears a Gaussian distribution along a vertical direction, and the doping concentration in the channel near the drain region is higher while and the doping concentration in the channel near the source region is lower, and wherein double control gates are formed at both sides of the vertical channel and the control gates form an L-shaped short-gate structure, so that a gate underlapped region is formed in the channel near the drain region, and a gate overlapped region is formed at the source region.