| 发明名称 |
CARBON FILM FORMATION METHOD, AND CARBON FILM |
| 摘要 |
A carbon film formation method according to an exemplary embodiment includes supplying an aromatic hydrocarbon gas having a methyl group into a processing chamber that accommodates a workpiece; generating plasma of a noble gas in a plasma generating chamber that is isolated from the processing chamber by a shielding unit; supplying particles in the plasma into the processing chamber through an opening in the shielding unit; and irradiating the particles to the aromatic hydrocarbon gas to form a carbon film having a π-conjugated ring structure or a π-conjugated chain structure on the workpiece. |
| 申请公布号 |
US2016017484(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201414770656 |
申请日期 |
2014.01.30 |
| 申请人 |
TOKYO ELECTRON LIMITED ;TOHOKU UNIVERSITY |
发明人 |
KIKUCHI Yoshiyuki;SAMUKAWA Seiji |
| 分类号 |
C23C16/26;C23C16/48;C23C16/511 |
主分类号 |
C23C16/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A carbon film formation method comprising:
supplying an aromatic hydrocarbon gas having a methyl group into a processing chamber that accommodates a workpiece; generating plasma of a noble gas in a plasma generating chamber that is isolated from the processing chamber by a shielding unit; supplying particles in the plasma into the processing chamber through an opening in the shielding unit; and irradiating the particles to the aromatic hydrocarbon gas to form a carbon film having a π-conjugated ring structure or a π-conjugated chain structure on the workpiece. |
| 地址 |
Minato-ku, Tokyo JP |
