| 摘要 |
Provided is a plasma processing device capable of plasma-processing a material to be processed without generating abnormal discharges. Also provided is a plasma processing method for performing a complex curing process using one plasma processing device with the pressure inside the vacuum chamber not being changed and the discharges also in a stable state, whereby the processing time is shortened and the production costs are minimized. The plasma processing device is provided with: a plasma gun (3) that has a negative electrode (31) connected to the negative pole side of a discharge power source (30) and intermediate electrodes (34, 35) connected to the positive pole side of the discharge power source (30), and generates plasma directed to the interior of the chamber (2); a convergence coil (38) that forms a magnetic flux which guides the electrons discharged by the negative electrode (31); and a reaction gas supply portion (28) that supplies, into the chamber (2), a reaction gas for surface-treating the material being processed (100). The material to be processed (100) is disposed in an electrically insulated state inside the chamber (2), and the plasma is formed inside the chamber (2) filled with the reaction gas to surface-treat the material to be processed (100). |
