| 摘要 |
PROBLEM TO BE SOLVED: To reduce resistance of each member constituting a transistor, to improve ON current of the transistor, and to improve performance of an integrated circuit.SOLUTION: A semiconductor device includes an n-channel FET and a p-channel FET which are provided on a single crystal semiconductor substrate through an insulating layer and are isolated in a manner of element isolation by an element isolation insulating layer. In the semiconductor device, each FET includes: a channel formation region including semiconductor material; a conductive region in contact with the channel formation region and including the semiconductor material; a metal region in contact with the conductive region; a gate insulating layer in contact with the channel formation region; a gate electrode in contact with the gate insulating layer; and a source electrode or a drain electrode partly including the metal region. |
