| 发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE |
| 摘要 |
There is provided a semiconductor light emitting device 100 including a substructure 101, 120, 130 including at least one light emitting region R1 including a plurality of three-dimensional (3-D) light emitting nanostructures 140 and at least one electrode region R2, R3 including a plurality of locations CP2A, 17A, 17B, 18A, 18B wherein an arrangement of the plurality of three-dimensional (3-D) light emitting nanostructures 140 and the plurality of locations CP2A, 17A, 17B, 18A, 18B are identical. |
| 申请公布号 |
US2016020358(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201514723869 |
申请日期 |
2015.05.28 |
| 申请人 |
LEE Dong Kuk;KO Geun Woo;YOO Geon-Wook;CHA Nam Goo |
发明人 |
LEE Dong Kuk;KO Geun Woo;YOO Geon-Wook;CHA Nam Goo |
| 分类号 |
H01L33/24;H01L33/42;H01L33/32;H01L33/08 |
主分类号 |
H01L33/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor light emitting device 100 comprising:
a substructure 101, 120, 130 including at least one light emitting region R1 including a plurality of three-dimensional (3-D) light emitting nanostructures 140 and at least one electrode region R2, R3 including a plurality of locations CP2A, 17A, 17B, 18A, 18B wherein an arrangement of the plurality of three-dimensional (3-D) light emitting nanostructures 140 and the plurality of locations CP2A, 17A, 17B, 18A, 18B are identical. |
| 地址 |
Suwon-si KR |
