METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Embodiments of the disclosure relate to a method for manufacturing a semiconductor device including a field effect transistor with improved electrical characteristics. According to embodiments of the disclosure, self-aligned contact plugs may be effectively formed using a metal hard mask portion disposed on a gate portion. In addition, a process margin of a photoresist mask for the formation of the self-aligned contact plugs may be improved by using the metal hard mask portion.

主权项

1. A method for manufacturing a semiconductor device, the method comprising:
forming first and second insulating patterns on a substrate, each of the insulating patterns protruding in a direction perpendicular to a top surface of the substrate; forming a conductive pattern between the insulating patterns, the conductive pattern including a gate portion and a metal hard mask portion on the gate portion; forming a first spacer between the conductive pattern and the first insulating pattern, and a second spacer between the conductive pattern and the second insulating pattern, wherein each of the spacers extends vertically from the top surface of the substrate; forming contact holes penetrating the insulating patterns by etching the insulating patterns using the metal hard mask portion as an etch mask; and forming contact plugs filling the contact holes, respectively, wherein a top surface of the metal hard mask portion vertically overlaps with respective top surfaces of the spacers.