METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

摘要

Provided is a method of manufacturing a semiconductor device including: forming a gate electrode structure on an active region of a semiconductor substrate; forming recesses in regions positioned on both sides of the gate electrode structure on the active region; performing a pre-treatment on the recesses using an inert gas plasma; growing epitaxial layers for a source and a drain on the pre-treated recesses; and forming a source electrode structure and a drain electrode structure in the epitaxial layers for the source and the drain, respectively. Also provided is a method in which, after an etching process for forming recesses and/or after an etching process for forming a contact hole, an etched surface may be treated with an inert gas plasma before growing an epitaxial layer. Thus, one or two types of plasma treatment may be employed in the method.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a gate electrode structure on an active region of a semiconductor substrate; forming recesses in regions positioned on both sides of the gate electrode structure on the active region of the semiconductor substrate; performing a pre-treatment on the recesses using an inert gas plasma to provide pre-treated recesses; growing an epitaxial layer on the pre-treated recesses; and forming an electrode structure on the epitaxial layer.