LOW IMPEDANCE HIGH DENSITY DEEP TRENCH CAPACITOR

摘要

Some embodiments relate to high density capacitor structures. Some embodiments include a first trench capacitor, a second trench capacitor and an interconnect structure. The first trench capacitor includes a first capacitor plate disposed in a plurality of trenches in a semiconductor substrate, and a second capacitor plate disposed in the plurality of trenches and separated from the first capacitor plate by a first capacitor dielectric along bottom and sidewall surfaces of the plurality of trenches. The second trench capacitor is disposed over the first trench capacitor. The second trench capacitor includes the second capacitor plate, and a third capacitor plate disposed in the plurality of trenches and separated from the second capacitor plate by a second capacitor dielectric. The interconnect structure connects the first capacitor plate and the third capacitor plate such that the first and second trench capacitors are in parallel.

主权项

1. An integrated circuit (IC), comprising:
a first trench capacitor comprising: a first capacitor plate disposed in a plurality of trenches in a semiconductor substrate, and a second capacitor plate disposed in the plurality of trenches and separated from the first capacitor plate by a first capacitor dielectric along bottom and sidewall surfaces of the plurality of trenches; a second trench capacitor disposed over the first trench capacitor, the second trench capacitor comprising: the second capacitor plate, and a third capacitor plate disposed in the plurality of trenches and separated from the second capacitor plate by a second capacitor dielectric; and an interconnect structure connecting the first capacitor plate and the third capacitor plate such that the first and second trench capacitors are in parallel.