Semiconductor Devices and Methods of Fabricating the Same

摘要

Provided is a semiconductor device including a substrate, first and second gate structures provided on the substrate, a source/drain region provided adjacent to the first gate structure, an interlayered insulating layer provided on the substrate to cover the source/drain region and the first and second gate structures, a source/drain contact hole penetrating the interlayered insulating layer and exposing the source/drain region, a trench formed in the interlayered insulating layer to expose a top surface of the second gate structure, a source/drain contact plug provided in the source/drain contact hole to be in contact with the source/drain region, and a resistor pattern provided in the trench to be in contact with a top surface of the second gate structure.

主权项

1. A semiconductor device, comprising:
a substrate; a first gate structure and a second gate structure on the substrate; a source/drain region adjacent to the first gate structure; an interlayered insulating layer on the source/drain region and the first and second gate structures; a source/drain contact hole extending through the interlayered insulating layer and exposing the source/drain region; a trench in the interlayered insulating layer, the trench exposing a top surface of the second gate structure; a source/drain contact plug in the source/drain contact hole and in contact with the source/drain region; and a resistor pattern in the trench and in contact with a top surface of the second gate structure.