Method of Manufacturing a Semiconductor Device

摘要

In a method, a first opening is formed in a first insulating interlayer on a first substrate. A first conductive pattern structure contacting a first diffusion prevention insulation pattern and having a planarized top surface is formed in the first opening. Likewise, a second conductive pattern structure contacting a second diffusion prevention insulation pattern is formed in a second insulating interlayer on a second substrate, plasma treatment process is performed on at least one of the first and second substrates having the first and second conductive pattern structures thereon, respectively. The first and second conductive pattern structures are contacted to each other to bond the first and second substrates.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a first opening in a first insulating interlayer on a first substrate; forming a first diffusion prevention insulation layer on an inner wall of the first opening and on the first insulating interlayer; anisotropically etching the first diffusion prevention insulation layer to form a first diffusion prevention insulation pattern on the inner wall of the first opening; forming a first conductive pattern structure in the first opening provided with the first diffusion prevention insulation pattern therein, the first conductive pattern structure having a planarized top surface; forming a second opening in a second insulating interlayer on a second substrate; forming a second diffusion prevention insulation layer on an inner wall of the second opening and on the second insulating interlayer; anisotropically etching the second diffusion prevention insulation layer to form a second diffusion prevention insulation pattern on the inner wall of the second opening; forming a second conductive pattern structure in the second opening provided with the second diffusion prevention insulation pattern therein; performing a plasma treatment process on at least one of the first and second substrates provided with the first and second conductive pattern structures thereon, respectively; and contacting the first and second conductive pattern structures to each other to bond the first and second substrates.