ENHANCEMENT OF MODULUS AND HARDNESS FOR UV-CURED ULTRA LOW-K DIELECTRIC FILMS

摘要

Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.

主权项

1. A method, comprising:
forming a precursor film on a substrate, wherein the precursor film contains a plurality of porogen molecules; exposing the precursor film to UV energy at a first temperature from about 325 degrees Celsius to about 350 degrees Celsius for a first predetermined time from about 20 seconds to about 30 seconds to initiate a cross-linking process; and heating the precursor film to a second temperature from about 355 degrees Celsius to about 400 degrees Celsius for a second predetermined time from about 200 seconds to about 240 seconds while exposing the precursor film to the UV energy to remove porogen molecules and to continue the cross-linking process.