METAL OXIDE SEMICONDUCTOR LAYER FORMING COMPOSITION, AND METHOD FOR PRODUCING METAL OXIDE SEMICONDUCTOR LAYER USING SAME

摘要

Provided is a composition for forming a metal oxide semiconductor that includes a solvent represented by general formula [1] and an inorganic metal salt. (In the formula, R1 represents a linear or branched C2-3 alkylene group, and R2 represents a linear or branched C1-3 alkyl group.)