ONE-MASK MTJ INTEGRATION FOR STT MRAM

摘要

A method for integrating a magnetic tunnel junction (MTJ) device into an integrated circuit includes providing in a semiconductor back-end-of-line (BEOL) process flow a substrate having a first interlevel dielectric layer and at least a first conductive interconnect. Over the first interlevel dielectric layer and the first conductive interconnect, magnetic tunnel junction material layers are deposited. From the material layers a magnetic tunnel junction stack, coupled to the first conductive interconnect, is defined using a single mask process. The magnetic tunnel junction stack is integrated into the integrated circuit.

主权项

1. A magnetic tunnel junction (MTJ) device in an integrated circuit (IC), comprising:
a substrate comprising a first interlevel dielectric layer and a first conductive interconnect; and a magnetic tunnel junction stack communicating with the first conductive interconnect, the magnetic tunnel junction stack comprising a plurality of magnetic tunnel junction material layers directly on the first interlevel dielectric layer and the first conductive interconnect, the magnetic tunnel junction stack having been defined from all of the plurality of magnetic tunnel junction material layers using only a single mask process, wherein the magnetic tunnel device is integrated into the IC.