| 发明名称 |
METHOD FOR ETCHING PROTECTIVE FILM, METHOD FOR PRODUCING TEMPLATE, AND TEMPLATE PRODUCED THEREBY |
| 摘要 |
A substrate having a protective film formed on a front surface and a recess in a back surface opposite the front surface is prepared. A resist pattern is formed on the protective film. The protective film is etched using plasma while applying a bias voltage, using the resist pattern as a mask. The bias voltage is increased according to the manner of decrease in the dielectric constant of a region of the substrate corresponding to a covered region of the front surface at which the protective film is present. |
| 申请公布号 |
US2016018738(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201514863693 |
申请日期 |
2015.09.24 |
| 申请人 |
FUJIFILM Corporation |
发明人 |
OHTSU Akihiko |
| 分类号 |
G03F7/40;H01J37/32;B29C33/38 |
主分类号 |
G03F7/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for etching a protective film, comprising the steps of:
preparing a substrate having a protective film formed on a front surface and a recess in a back surface opposite the front surface; forming a resist pattern on the protective film; and etching the protective film using plasma while applying a bias voltage, using the resist pattern as a mask; the bias voltage being increased according to the manner of decrease in the dielectric constant of a region of the substrate corresponding to a covered region of the front surface at which the protective film is present in the protective film etching step. |
| 地址 |
Tokyo JP |
