| 发明名称 |
DEFECT FREE SINGLE CRYSTAL THIN LAYER |
| 摘要 |
A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations. |
| 申请公布号 |
EP2973667(A1) |
申请公布日期 |
2016.01.20 |
| 申请号 |
EP20130877834 |
申请日期 |
2013.03.14 |
| 申请人 |
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY |
发明人 |
OOI, BOON, S.;EL AFANDY, RAMI, TAREK |
| 分类号 |
H01L21/306;C30B29/40;C30B33/10;H01L21/02 |
主分类号 |
H01L21/306 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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