发明名称 Low-temperature methods for spontaneous material spalling
摘要 <p>Method to (i) introduce additional control into a material spalling process, thus improving both the crack initiation and propagation, and (ii) increase the range of selectable spalling depths are provided. In one embodiment, the method includes providing a stressor layer on a surface of a base substrate at a first temperature which is room temperature. Next, the base substrate including the stressor layer is brought to a second temperature which is less than room temperature. The base substrate is spalled at the second temperature to form a spalled material layer. Thereafter, the spalled material layer is returned to room temperature, i.e., the first temperature.</p>
申请公布号 GB2503851(B) 申请公布日期 2016.01.20
申请号 GB20130018741 申请日期 2012.05.08
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY 发明人 MAHA M KHAYYAT;NORMA E SOSA CORTES;KATHERINE L SAENGER;STEPHEN W BEDELL;DEVENDRA K SADANA
分类号 H01L21/18;H01L21/30 主分类号 H01L21/18
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