THIN FILM PHOTOVOLTAIC DEVICE WITH LARGE GRAIN STRUCTURE AND METHODS OF FORMATION

摘要

Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdSxTe1-x (where 0≦̸x≦̸1), having an average grain size to thickness ratio from greater than 2 to about 50 and an average grain size of between about 4 μm and about 14 μm and methods for forming the same.