摘要 |
The present invention relates to a wafer-to-wafer bonding structure, capable of keeping bonding force, not less than a predetermined level, without a dummy pattern, and preventing a defect by a void or gap after bonding. The wafer-to-wafer bonding structure includes: a first wafer including a first insulating layer on a first substrate, and a first copper pad formed by penetrating the first insulating layer but partially protruding from an upper surface of the first insulating layer and of which lower surface and side are surrounded by a first wall metal layer; a second wafer including a second substrate on a second insulating layer, and a second copper pad formed by penetrating the second insulating layer but partially protruding from an upper surface of the second insulating layer, of which lower surface and side are surrounded by a second wall metal layer, and combined with the first copper pad; and a polymer layer surrounding protruding sides of the first and second wall metal layers, and placed between the first and second wafers. |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUN, JIN HO;KANG, PIL KYU;PARK, BYUNG LYUL;PARK, JAE HWA;CHOI, JU IL |