发明名称 ERROR CORRECTION OPERATIONS IN A MEMORY DEVICE
摘要 Memory devices configured to determine if an error exists in read data and to respond to determined errors, as well as methods of operating such memory devices. In at least one embodiment, an internal controller of a memory device periodically performs internal error correction operations on stored user data and corrects user data in the memory device independently from instructions from an external memory access device. In further memory devices, an internal controller performs internal error correction operations on stored user data and adjusts trim values that define voltages to be utilized during a read operation in response to determining that the read user data comprises an error.
申请公布号 EP2973588(A2) 申请公布日期 2016.01.20
申请号 EP20140769447 申请日期 2014.03.14
申请人 MICRON TECHNOLOGY, INC. 发明人 LAM, WILLIAM
分类号 G11C29/42;G06F11/10;G11C16/02;G11C16/34 主分类号 G11C29/42
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