发明名称 |
EPI-POLY ETCH STOP FOR OUT OF PLANE SPACER DEFINED ELECTRODE |
摘要 |
In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop. |
申请公布号 |
EP2973665(A1) |
申请公布日期 |
2016.01.20 |
申请号 |
EP20140770043 |
申请日期 |
2014.03.08 |
申请人 |
ROBERT BOSCH GMBH;GRAHAM, ANDREW;YAMA, GARY;O'BRIEN, GARY |
发明人 |
GRAHAM, ANDREW;YAMA, GARY;O'BRIEN, GARY |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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