| 摘要 |
The purpose of the present invention is to provide a process for forming an organic semiconductor film, said process being capable of forming stably an organic semiconductor film which has excellent crystallinity and high mobility. This process for forming an organic semiconductor film includes: applying a covering member having a convex-space-forming restrictive surface, which is to be alienated from a substrate in one direction, to the surface of the substrate in such a manner that the covering member covers an area in which an organic semiconductor film is to be formed; filling a solution into the space formed between the covering member and the substrate so as to satisfy prescribed requirements; and then drying the solution to form an organic semiconductor film. Thus, an organic semiconductor film having excellent crystallinity is formed through use of a solution of an organic semiconductor material. |
