发明名称 |
METHOD FOR MANUFACTURING NANO-IMPRINT MOULD, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE USING THE NANO IMPRINT MOULD MANUFACTURED THEREBY, AND LIGHT-EMITTING DIODE MANUFACTURED THEREBY |
摘要 |
<p>The present invention relates to a method of manufacturing a light emitting diode, and the light emitting diode manufactured thereby. The method according to the present invention includes a process of forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a temporary substrate, a process of forming a p-type electrode on the p-type nitride semiconductor layer, a process of forming a conductive substrate on the p-type electrode, a process of removing the temporary substrate to expose the n-type nitride semiconductor layer, a process of forming a nanoimprint resist layer on the n-type nitride semiconductor layer, a process of pressing the nanoimprint mold on the nanoimprint resist layer to transfer the nano-pattern onto the nanoimprint resist layer, and a process of separating the nanoimprint mold from the nanoimprint resist layer having the nano-pattern and etching a portion of the nanoimprint resist layer having the nano-pattern to form an n-type electrode. The present invention allows for a method of manufacturing a nanoimprint mold that can be efficiently and economically formed for enhancing the light extraction efficiency of a light-emitting diode, a method of manufacturing a light-emitting diode, and a light-emitting diode using the nanoimprint module.</p> |
申请公布号 |
EP2660027(A4) |
申请公布日期 |
2016.01.20 |
申请号 |
EP20110852764 |
申请日期 |
2011.10.28 |
申请人 |
POSTECH ACADEMY-INDUSTRY FOUNDATION |
发明人 |
LEE, JONG LAM;SON, JUN HO;SONG, YANG HEE |
分类号 |
G03F7/00;B29C33/38;B29C59/02;H01L21/306;H01L33/00 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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