| 摘要 |
A semiconductor device structure comprises: a layer of compound semiconductor material 70 and a layer of polycrystalline chemical vapour deposited (CVD) diamond material 74, where the layer of polycrystalline CVD diamond material 74 is bonded to the layer of compound semiconductor material 70 via a layer of nano-crystalline diamond 72 which is directly bonded to the layer of compound semiconductor material 70, the layer of nano-crystalline diamond 72 having a thickness in a range 5 to 50 nm and configured such that an effective thermal boundary resistance (TBReff) as measured by transient thermoreflectance at an interface between the layer of compound semiconductor material 70 and the layer of polycrystalline CVD diamond material 74 is no more than 50 m²K/GW. Also disclosed is a method of making said semiconductor device comprising: providing a substrate comprising a layer of compound semiconductor material 70; forming a seed layer of nano-crystalline diamond 72 having a thickness in a range of 5 to 50 nm on the compound semiconductor material 70; and growing a layer of polycrystalline CVD diamond 74 on the seed layer 72. The present invention allows better thermal transmittance from devices formed on/in the compound semiconductor layer to the polycrystalline diamond heat spreader. |
