| 摘要 |
FIELD: physics.SUBSTANCE: magnetoelectric memory comprises a magnetic element, having two directions of stable equilibrium of its magnetisation, wherein said directions are not opposite to each other; an piezoelectric or electrostrictive substrate which is mechanically linked to said magnetic element; and at least a first and a second electrode, configured to apply an electric field to the piezoelectric or electrostrictive substrate such that said substrate acts on said magnetic element with non-isotropic mechanical stress which causes transition of the magnetisation state of said magnetic element due to magnetostrictive coupling.EFFECT: eliminating the energy barrier between two stable states during transition.19 cl, 23 dwg |
