| 发明名称 |
半導体装置の作製方法、及び、半導体装置 |
| 摘要 |
A semiconductor element (103) is formed on a first surface of the substrate (164). A resin layer (163) is formed over a second surface of the substrate which is opposite to the first surface of the substrate and on a part of the side surface of the substrate. |
| 申请公布号 |
JP5844858(B2) |
申请公布日期 |
2016.01.20 |
| 申请号 |
JP20140141905 |
申请日期 |
2014.07.10 |
| 申请人 |
株式会社半導体エネルギー研究所 |
发明人 |
高橋 秀和;山田 大幹;門馬 洋平;安達 広樹;山崎 舜平 |
| 分类号 |
H01L21/301;H01L21/336;H01L29/786;H01L31/10 |
主分类号 |
H01L21/301 |
| 代理机构 |
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代理人 |
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