发明名称 |
WRITE-ASSISTED MEMORY WITH ENHANCED SPEED |
摘要 |
A write-assisted memory includes a pre-charge assist circuit that assists the pre-charge of the power supply voltage on a power supply lead for an accessed memory cell in a bit-line-multiplexed group of memory cells subsequent to a write-assist period by coupling charge from the power supply leads for the remaining non-accessed memory cells in the bit-line-multiplexed group of memory cells. |
申请公布号 |
EP2973578(A1) |
申请公布日期 |
2016.01.20 |
申请号 |
EP20140713011 |
申请日期 |
2014.03.10 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
JIN, PENG;ABU-RAHMA, MOHAMED, HASSAN;AHMED, FAHAD |
分类号 |
G11C11/419;G11C5/14;G11C7/12 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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