Active region including nanodots (referred to also as quantum dots) in matrix crystal grown on SI substrate and constituted of zincblende

摘要

A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blende-type BP layer formed on an Si substrate, an AlyInxGazN (y≧0, x>0) crystal as a mother crystal maintaining the zinc blende-type crystal structure and In dots having an In concentration higher than that of the AlyInxGazN (y≧0, x>0) crystal as the mother crystal.