发明名称 バリスタ機能付き積層型半導体セラミックコンデンサとその製造方法
摘要 A semiconductor ceramic having a compounding molar ratio m between a Sr site and a Ti site that satisfies 1.000 ≦̸m≦̸1.020, has a donor element present as a solid solution in crystal grains, has an acceptor element present in a grain boundary layer in the range of 0.5 mol or less with respect to 100 mol of the Ti element, contains a Zr element in the range of 0.15 mol or more and 3.0 mol or less with respect to 100 mol of the Ti element, and has the crystal grains of 1.5 μm or less in average grain size.
申请公布号 JP5846398(B2) 申请公布日期 2016.01.20
申请号 JP20130539642 申请日期 2012.10.16
申请人 株式会社村田製作所 发明人 川本 光俊
分类号 H01G4/12;C04B35/47;H01C7/10;H01G4/30;H01G4/40 主分类号 H01G4/12
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