| 摘要 |
PURPOSE:To confirm what kind of mask is used in what process by a method wherein a resist pattern is formed using the mask having the pattern containing a marking indicating the kind of the photomask in each process. CONSTITUTION:For example, the number showing the manufacturing process of IC and the letters showing the type of the photomask to be used in said process are used as the marking for identification of the photomask. When an etching is performed for patterning of an oxide film 2, the oxide film 2 in a region 4 is etched, and after a resist 3 has been removed, the marking pattern 4 of the exposed surface of a substrate 1 is generated. Accordingly, if the marking pattern such as above-mentioned is formed on the position on which substrate surface is not overlapped each other in each process of ion implantation or etching, what type of photomask is used in what process can be known by inspecting the surface of the silicon substrate for which a treatment has been finished using an optical microscope. |
