发明名称 太陽電池及びその製造方法
摘要 [Object] To provide a solar cell capable of decreasing a current density and inhibiting time-related deterioration in a back junction solar cell. [Solving Means] Solar cell 1A comprises semiconductor substrate 10n having light-receiving surface 11 receiving light and rear surface 12 provided on an opposite side from light-receiving surface 11, first semiconductor layer 20n having a first conductivity type, and second semiconductor layer 30p having a second conductivity type, first semiconductor layer 20n and second semiconductor layer 30p being formed on rear surface 12, in which a trench 13 is formed in rear surface 12, first semiconductor layer 20n is formed on rear surface in which trench 13 is not formed, and second semiconductor layer 30p is formed on side surface 17 of trench 13 and bottom surface 19 of trench in arrangement direction x in which first semiconductor layer 20n and second semiconductor layer 30p are alternately arranged.
申请公布号 JP5845445(B2) 申请公布日期 2016.01.20
申请号 JP20110551872 申请日期 2011.01.26
申请人 パナソニックIPマネジメント株式会社 发明人 井手 大輔;三島 孝博;重松 正人;馬場 俊明;森 博幸;森上 光章;菱田 有二;坂田 仁;後藤 良
分类号 H01L31/047;H01L31/0224 主分类号 H01L31/047
代理机构 代理人
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