| 摘要 |
The present invention relates to a plasma processing system and a method for high precision etching of a microelectronic substrate. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generate a first plasma to form a thin absorption layer on the surface of the microelectronic substrate. The absorption layer may be removed when the system transitions to a second plasma. The difference between the first and second plasma may be ion energy proximate to the substrate. For example, the first plasma may have an ion energy of 20 eV or less and the second plasma may have an ion energy of 20 eV or greater. |
