COMPOSITION AND PROCESS FOR STRIPPING PHOTORESIST FROM A SURFACE INCLUDING TITANIUM NITRIDE

摘要

A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include sulfuric acid and at least one phosphorus-containing acid. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s) or the metal gate materials.