发明名称 |
LIGHT EMITTING DIODE |
摘要 |
<p>A light-emitting diode element of the present invention includes: an n-type conductive layer 2 having a principal surface and a rear surface, the n-type conductive layer 2 being made of a gallium nitride-based compound, the principal surface being an m -plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3 interposed between the n-type conductive layer 2 and the p-type conductive layer 4; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.</p> |
申请公布号 |
EP2458654(A4) |
申请公布日期 |
2016.01.20 |
申请号 |
EP20100802058 |
申请日期 |
2010.07.12 |
申请人 |
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. |
发明人 |
IWANAGA, JUNKO;YOKOGAWA, TOSHIYA;YAMADA, ATSUSHI |
分类号 |
H01L33/38;H01L33/16;H01L33/32 |
主分类号 |
H01L33/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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