NANOWIRE LED STRUCTURE WITH DECREASED LEAKAGE AND METHOD OF MAKING SAME
摘要
A semiconductor device includes a plurality of first conductivity type semiconductor nanowire cores located over a support, and an insulating mask layer located over the support. The nanowire cores include semiconductor nanowires epitaxially extending from portions of a semiconductor surface of the support exposed through openings in the insulating mask layer. The device also includes a plurality of second conductivity type semiconductor shells extending over and around the respective nanowire cores, a first electrode layer that contacts the second conductivity type semiconductor shells and extends into spaces between the semiconductor shells, and an insulating layer located between the insulating mask layer and the first electrode in the spaces between the semiconductor shells.
申请公布号
EP2973756(A1)
申请公布日期
2016.01.20
申请号
EP20140762216
申请日期
2014.03.14
申请人
GLO AB;SVENSSON, CARL PATRIK THEODOR;ROMANO, LINDA;HERNER, SCOTT BRAD;LEMAY, CYNTHIA
发明人
SVENSSON, CARL PATRIK THEODOR;ROMANO, LINDA;HERNER, SCOTT BRAD;LEMAY, CYNTHIA