发明名称 |
MAGNETIC RANDOM ACCESS MEMORY CELLS WITH ISOLATING LINERS |
摘要 |
A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers. |
申请公布号 |
EP2973726(A1) |
申请公布日期 |
2016.01.20 |
申请号 |
EP20140779176 |
申请日期 |
2014.03.10 |
申请人 |
CROCUS TECHNOLOGY INC. |
发明人 |
BEERY, DAFNA;REID, JASON;SHIN, JONG;NOZIERES, JEAN PIERRE;JOUBERT, OLIVIER |
分类号 |
H01L29/82;H01L43/08 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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