发明名称 |
LOCAL BURIED CHANNEL DIELECTRIC FOR VERTICAL NAND PERFORMANCE ENHANCEMENT AND VERTICAL SCALING |
摘要 |
A non-volatile memory device and a method for forming the non-volatile memory device are disclosed. The memory device utilizes a local buried channel dielectric in a NAND string that reduces bulk channel leakage at the edge of the NAND string where the electric field gradient along the direction of the string pillar is at or near a maximum during programming operations. The memory device comprises a channel that is coupled at one end to a bitline and at the other end to a source. A select gate is formed at the end of the channel coupled to the bitline to selectively control conduction between the bitline and the channel. At least one non-volatile memory cell is formed along the length of the channel between the select gate and the second end of the channel. A local dielectric region is formed within the channel at the first end of the channel. |
申请公布号 |
EP2973709(A1) |
申请公布日期 |
2016.01.20 |
申请号 |
EP20140769456 |
申请日期 |
2014.02.13 |
申请人 |
INTEL CORPORATION |
发明人 |
KOVAL, RANDY J.;SIMSEK-EGE, FATMA A. |
分类号 |
H01L27/115;H01L29/66;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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