发明名称 |
INSULATING GATE TYPE BIPOLAR SEMICONDUCTOR DEVICE |
摘要 |
<p>An insulated-gate bipolar semiconductor device is provided wherein electric resistance generated in an emitter impurity region and between an emitter electrode and a region in the close vicinity of a gate takes a prescribe value irrespective of the distance of the emitter impurity region in direct contact with the emitter electrode in order to increase a load short circuit safe operation region without degrading the forward voltage drop and switching characteristic. <IMAGE></p> |
申请公布号 |
EP1050908(B1) |
申请公布日期 |
2016.01.20 |
申请号 |
EP19980900704 |
申请日期 |
1998.01.22 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MINATO, TADAHARU |
分类号 |
H01L29/739;H01L29/06;H01L29/08 |
主分类号 |
H01L29/739 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|