Semiconductor device and process for producing semiconductor device

摘要

A semiconductor device includes: a substrate in which a product region and scribe regions are defined; a 1st insulation film formed above the substrate; a metal film in the 1st insulation film, disposed within the scribe regions in such a manner as to surround the product region; a 2nd insulation film formed on the 1st insulation film and the metal film; a 1st groove disposed more inside than the metal film in such a manner as to surround the product region, and reaching from a top surface of the 2nd insulation film to a position deeper than a top surface of the metal film; and a 2nd groove disposed more outside than the metal film in such a manner as to surround the metal film, and reaching from the top surface of the 2nd insulation film to a position deeper than the top surface of the metal film.

主权项

1. A process for producing a semiconductor device comprising:
forming a 1st insulation film above a substrate in which a product region and scribe regions surrounding the product region are defined; forming a 1st metal film in the 1st insulation layer within the scribe regions in such a manner as to surround the product region; forming a 2nd insulation film on the 1st metal film and the 1st insulation film; forming a 2nd metal film on the 2nd insulation film, wherein the 2nd metal film is disposed within the scribe regions in such a manner to surround the product region, an edge of the 2nd metal film on an inner peripheral side is positioned more inside than the 1st metal film, and an edge of the 2nd metal film on an outer peripheral side is positioned more outside than the 1st metal film; forming an insulating protection film on the 2nd metal film and the 1st insulation film; forming a mask pattern including a 1st opening portion on the protection film, wherein the 1st opening portion is disposed within the scribe regions in such a manner as to surround the product region, an edge of the 1st opening portion on an inner peripheral side is positioned more inside than the 2nd metal film, and an edge of the 1st opening portion on an outer peripheral side is positioned more outside than the 2nd metal film; and etching the protection film by using the mask pattern as mask, to expose the 2nd metal film, and subsequently etching the 2nd insulation film and the 1st insulation film to positions deeper than a top surface of the 1st metal film, by using the 2nd metal film as mask, to thereby form grooves on both sides of the 2nd metal film.