Method of making a semiconductor device package

摘要

A method of forming a semiconductor device package includes bonding a front surface of a first substrate to a second substrate, and thinning a back surface of the first substrate. The method includes depositing and patterning a dielectric layer on the thinned back surface of the first substrate, and etching the first substrate after the depositing and the patterning of the dielectric layer are performed to form a through silicon via to enable electrical connection with a first level metal of the first substrate. The method includes depositing an isolation layer to line the through silicon via is formed, and etching the isolation layer at the bottom of the through silicon via. The method includes depositing a conductive layer to line the through silicon via after the isolation layer at the bottom of the through silicon via is etched, and deposited a copper film over the conductive layer.

主权项

1. A method of forming a semiconductor device package, the method comprising:
bonding a front surface of a first substrate to a second substrate; thinning a back surface of the first substrate; depositing and patterning a dielectric layer on the thinned back surface of the first substrate; etching the first substrate after the depositing and the patterning of the dielectric layer are performed to form a through silicon via to enable making an electrical connection with a first level metal of the first substrate; depositing an isolation layer to line the through silicon via; etching the isolation layer at the bottom of the through silicon via; and depositing a conductive layer to line the through silicon via after the isolation layer at the bottom of the through silicon via is etched; and depositing a copper film over the conductive layer.