Wafer cleaning apparatus and wafer cleaning method using the same

摘要

The object of the present invention is to provide a wafer cleaning apparatus that reduces the amount of dissolved oxygen, without using hydrogen peroxide, to be able to reduce the deformation, etc. of a wafer and to reduce silicon consumption and a wafer cleaning method using the same.;The present invention provides a wafer cleaning apparatus comprising: a first thin film contactor that receives drug solution for removing an oxide film or ultra pure water to separate and discharge gas dissolved in the drug solution for removing the oxide film or the ultra pure water; a second thin film contactor that receives the drug solution for removing the oxide film or the ultra pure water discharged from the first thin film contactor; a vacuum pump that discharges gas separated in the first and second thin film contactors to the outside; and a process vessel that stores the drug solution for removing the oxide film or the ultra pure water discharged from the second thin film contactor, and a wafer cleaning method using the same.

主权项

1. A wafer cleaning apparatus comprising:
a first thin film contactor that receives drug solution for removing an oxide film or ultra pure water and receives nitrogen to separate and discharge gas dissolved in the drug solution for removing the oxide film or the ultra pure water; a second thin film contactor that receives the drug solution for removing the oxide film or the ultra pure water discharged from the first thin film contactor; a vacuum pump that discharges gas separated in the first and second thin film contactors to the outside; a process vessel that stores the drug solution for removing the oxide film or the ultra pure water discharged from the second thin film contactor; a first pipe in fluid communication with the first thin film contactor and for supplying the drug solution for removing the oxide film or the ultra pure water to the first thin film contactor; a second pipe through which the drug solution for removing the oxide film or the ultra pure water discharged from the first thin film contactor passes; and a third pipe for supplying the nitrogen to the first thin film contactor, wherein the first thin film contactor includes a first gas inlet coupled to the third pipe, wherein the second thin film contactor includes a second gas inlet coupled to the third pipe so that nitrogen is supplied to the second thin film contactor, wherein the third pipe includes a first branch coupled to the first gas inlet and a second branch coupled to the second gas inlet to thereby supply the nitrogen to the first and second thin film contactor in parallel, and wherein at least one of the first and second thin film contactors comprises a porous membrane contactor that is separate from the process vessel.