发明名称 |
Composition for tungsten CMP |
摘要 |
A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate. |
申请公布号 |
US9238754(B2) |
申请公布日期 |
2016.01.19 |
申请号 |
US201414203621 |
申请日期 |
2014.03.11 |
申请人 |
Cabot Microelectronics Corporation |
发明人 |
Grumbine Steven;Dysard Jeffrey;Fu Lin;Ward William;Whitener Glenn |
分类号 |
C09G1/02;H01L21/306;H01L21/321 |
主分类号 |
C09G1/02 |
代理机构 |
|
代理人 |
Omholt Thomas E.;Streinz Christopher C.;Hornilla Arlene |
主权项 |
1. A chemical mechanical polishing composition comprising:
a water based liquid carrier; a colloidal silica abrasive dispersed in the liquid carrier, the colloidal silica abrasive having a permanent positive charge of at least 6 mV; an amine compound in solution in the liquid carrier, wherein the amine compound comprises an alkyl group having 12 or more carbon atoms; and an iron containing accelerator. |
地址 |
Aurora IL US |