Method for manufacturing SOI wafer

摘要

A method for manufacturing a SOI wafer, including a step of performing a thickness reducing adjustment to a SOI layer of the SOI wafer by carrying out a sacrificial oxidation to the SOI wafer for effecting thermal oxidation to a surface of the SOI layer and removing a formed thermal oxide film, wherein, when the thermal oxidation in the sacrificial oxidation treatment is carried out with the use of a batch processing heat treatment furnace during the rising of a temperature and/or the falling of a temperature, a substantially concentric oxide film thickness distribution is formed on the surface of the SOI layer. The result is a method for manufacturing a SOI wafer that enables manufacturing a SOI wafer that has improved radial film thickness distribution with good productivity by performing the sacrificial oxidation treatment for forming a substantially concentric oxide film and removing the formed thermal oxide film.

主权项

1. A method for manufacturing an SOI wafer, having a step of performing a thickness reducing adjustment to an SOI layer of the SOI wafer by carrying out a sacrificial oxidation treatment to the SOI wafer for effecting thermal oxidation to a surface of the SOI layer and removing a formed thermal oxide film formed on the surface of the SOI layer of the SOI wafer,
wherein the SOI layer in the SOI wafer is subjected to the sacrificial oxidation treatment and the SOI layer has a concentric film thickness distribution that is a thickness at the central portion of the SOI layer in the SOI wafer higher than that of an outer peripheral portion of the SOI layer in the SOI wafer or that is a thickness at the central portion of the SOI layer in the SOI wafer being thinner than that of an outer peripheral portion of the SOI layer in the SOI wafer, and when the thermal oxidation in the sacrificial oxidation treatment is carried out with the use of a batch processing heat treatment furnace during one or both of rising of a temperature or falling of a temperature, the thermal oxide film having a concentric oxide film thickness distribution formed on the surface of the SOI layer so that the concentric film thickness distribution of the SOI layer can be canceled out by the concentric oxide film thickness distribution of the thermal oxide film.