发明名称 Array substrate and display device including pixel units with multiple display regions
摘要 Embodiments of the invention provide an array substrate and a display device. The array substrate comprises a base substrate, a plurality of gate lines and a plurality of data lines formed on the base substrate, and a plurality of pixel units defined by the plurality of gate lines and the plurality of data lines intersecting with each other. Each pixel unit is driven by a same gate line and a same data line. Each pixel unit includes a thin film transistor structure and at least two display regions. Each display region includes a pixel electrode. The thin film transistor structure drives the pixel electrodes in the at least two display regions simultaneously and causes voltages applied on the pixel electrodes in the at least two display regions different from one another.
申请公布号 US9239503(B2) 申请公布日期 2016.01.19
申请号 US201314064521 申请日期 2013.10.28
申请人 BOE Technology Group Co., Ltd.;HEFEI BOE Optoelectronics Technology Co., Ltd. 发明人 Zhang Xinxia;Tu Zhizhong;Guo Xiao;Lv Fengzhen;Lim Byungcheon
分类号 G02F1/136;G02F1/1337;G02F1/1333;G09G3/30;G09G3/36;G02F1/1368;G02F1/1343;G02F1/1362 主分类号 G02F1/136
代理机构 Banner & Witcoff, Ltd. 代理人 Banner & Witcoff, Ltd.
主权项 1. An array substrate, comprising a base substrate, a plurality of gate lines and a plurality of data lines formed on the base substrate, and a plurality of pixel units defined by the plurality of gate lines and the plurality of data lines intersecting with each other, wherein: each pixel unit is driven by a same gate line and a same data line; each pixel unit includes a thin film transistor structure and at least two display regions, each display region includes a pixel electrode, the thin film transistor structure drives the pixel electrodes in the at least two display regions simultaneously and causes voltages applied on the pixel electrodes in the at least two display regions different from one another; the thin film transistor structure is a composite thin film transistor that includes a gate electrode, a common source electrode, two drain electrodes, and two channels formed respectively between the common source electrode and the two drain electrodes; and the two channels formed respectively between the common source electrode and the two drain electrodes are different from each other in channel width.
地址 Beijing CN