Magnetic tunnel junctions and methods of forming magnetic tunnel junctions

摘要

A method of forming a line of magnetic tunnel junctions includes forming magnetic recording material over a substrate, non-magnetic material over the recording material, and magnetic reference material over the non-magnetic material. The substrate has alternating outer regions of reactant source material and insulator material along at least one cross-section. The reference material is patterned into a longitudinally elongated line passing over the alternating outer regions. The recording material is subjected to a set of temperature and pressure conditions to react with the reactant of the reactant source material to form regions of the dielectric material which longitudinally alternate with the recording material along the line and to form magnetic tunnel junctions along the line which individually comprise the recording material, the non-magnetic material, and the reference material that are longitudinally between the dielectric material regions. Other methods, and lines of magnetic tunnel junctions independent of method, are disclosed.

主权项

1. A method of forming a line of magnetic tunnel junctions, comprising:
forming magnetic recording material over a substrate, non-magnetic material over the recording material, and magnetic reference material over the non-magnetic material; the substrate comprising alternating outer regions of reactant source material and insulator material along at least one cross-section; the reactant source material comprising a reactant that will react with the recording material to form dielectric material when subjected to a set of temperature and pressure conditions; patterning the reference material into a longitudinally elongated line passing over the alternating outer regions; and subjecting the recording material to the set of temperature and pressure conditions to react with the reactant of the reactant source material to form regions of the dielectric material which longitudinally alternate with the recording material along the line and to form magnetic tunnel junctions along the line which individually comprise the recording material, the non-magnetic material, and the reference material that are longitudinally between the dielectric material regions.