Method for making an integrated circuit

摘要

A method includes making a gate stack on the surface of an active zone, including depositing a first dielectric layer; depositing a gate conductive layer; depositing a first metal layer; depositing a second metal layer; depositing a second dielectric layer; partially etching the gate stack for the formation of a gate zone on the active zone; making insulating spacers on either side of the gate zone on the active zone; making source and drain electrodes zones; making silicidation zones on the surface of the source and drain zones; etching, in the gate zone on the active zone, the second dielectric layer and the second metal layer with stopping on the first metal layer, so as to form a cavity between the insulating spacers; making a protective plug at the surface of the first metal layer of the gate zone on the active zone, where the protective plug fills the cavity.

主权项

1. A method for making an integrated circuit on a substrate, comprising:
making a gate stack on a surface of an active zone, the making comprising: depositing a layer of first dielectric which extends over the active zone; depositing a gate conductive layer which extends over the layer of first dielectric; depositing a layer of a first metal which extends over the gate conductive layer; depositing a layer of a second metal which extends over the layer of the first metal; depositing a layer of a second dielectric which extends over the layer of the second metal;partially etching the gate stack for the formation of a gate zone on the active zone;
making insulating spacers on either side of the gate zone on the active zone; making source and drain zones; making silicidation zones on a surface of the source and drain zones; etching, in the gate zone on the active zone, the second dielectric layer and the layer of second metal with stopping on the layer of the first metal, so as to form a cavity between the insulating spacers; and making a protective plug at a surface of the layer of first metal of the gate zone on the active zone, wherein the protective plug fills the cavity.