| 摘要 |
<p>PURPOSE:To shorten the time needed for discrimination of information and also to prevent malfunction, by reducing the difference between the reference voltage and the voltage of a memory node when a detecting means detects the start of access to a memory cell. CONSTITUTION:The voltage difference between nodes VS and VS' is large before the base voltages VB and VB' of an accessed memory cell start their drops. Then a cell selection switching circuit 21 delivers the signal of a high level. Therefore, a reference voltage generating circuit 22 sets the reference voltage VR at a level lower by a fixed degree than the voltage VB'. When access is started and the difference of voltage between nodes VS and VS' is reduced, the circuit 21 delivers the signal of a low level. Thus the voltage VR starts rising and therefore the drop of both VB and VB' is started. Then the voltage VB' crosses immediately the voltage VR and a sense amplifier circuit 16 starts its discriminating action. When this discriminating action is through, the difference between VS and VS' is increased again. Thus the voltage VR is dropped again.</p> |
