MULTI-PHOTONIC ANNEALING AND SINTERING OF SEMICONDUCTOR OXIDE USING INTENSE PULSED WHITE LIGHT, NEAR INFRARED RAY AND DEEP ULTRAVIOLET

摘要

The present invention relates to a method for light sintering a semiconductor oxide ink by a complex light source using intense pulsed light, a near infrared ray and a far ultraviolet ray, the method being capable of annealing and sintering a semiconductor oxide ink for complex light sintering, selectively or for a large area, at room temperature and under atmospheric conditions for a short time of 1 to 100 ms, the semiconductor oxide ink for complex light sintering comprising: a semiconductor oxide selected from strontium titanium oxide (SrTiO_3), barium titanium oxide (BaTiO_3) or a mixture thereof; and a dispersion stabilizer.