发明名称 BIT-LINE SENSE AMPLIFIER CAPABLE OF COMPENSATING MISMATCH BETWEEN TRANSISTORS, AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME
摘要 Disclosed is a bit-line sense amplifier enabling the compensation of mismatch between transistors. The bit-line sense amplifier may comprise a pull-up driving circuit, a pull-down driving circuit, and a latch-type sense amplifier. The pull-up driving circuit generates a first driving current which changes in response to an up control signal and provides the same to a first driving power supply line. The pull-down driving circuit generates a second driving current which changes in response to a down control signal and provides the same to a second driving power supply line. The latch-type sense amplifier is connected to the first driving power supply line and the second driving power supply line, and senses a voltage difference between a bit line and a complementary bit line and amplifies the voltage.
申请公布号 KR20160006509(A) 申请公布日期 2016.01.19
申请号 KR20140086183 申请日期 2014.07.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MOON, JONG HO;KO, TAI YOUNG;YOU, HYUNG SIK
分类号 G11C7/06;G11C7/12 主分类号 G11C7/06
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