Memory arrays and methods of forming an array of memory cells

摘要

A method of forming an array of memory cells includes forming lines of covering material that are elevationally over and along lines of spaced sense line contacts. Longitudinal orientation of the lines of covering material is used in forming lines comprising programmable material and outer electrode material that are between and along the lines of covering material. The covering material is removed over the spaced sense line contacts and the spaced sense line contacts are exposed. Access lines are formed. Sense lines are formed that are electrically coupled to the spaced sense line contacts. The sense lines are angled relative to the lines of spaced sense line contacts and relative to the access lines. Other embodiments, including structure independent of method, are disclosed.

主权项

1. A method of forming an array of memory cells, comprising:
forming lines of covering material that are elevationally over and along lines of spaced sense line contacts; using longitudinal orientation of the lines of covering material in forming lines comprising programmable material and outer electrode material that are between and along the lines of covering material; removing the covering material over the spaced sense line contacts and exposing the spaced sense line contacts; forming access lines; and forming sense lines that are electrically coupled to the spaced sense line contacts, the sense lines angling longitudinally perpendicular relative to longitudinal orientation of the lines of spaced sense line contacts and relative to longitudinal orientation of the access lines.