Oxide semiconductor target and oxide semiconductor material, as well as semiconductor device using the same

摘要

There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ΔVth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

主权项

1. An oxide semiconductor target formed by sintering a Zn—Sn—O oxide semiconductor material comprising zinc oxide and tin oxide as a main ingredient,
wherein a compositional ratio of Zn that constitutes the Zn—Sn—O oxide semiconductor material: [Zn]/([Zn]+[Sn]) is within a range from 0.5 to 0.85 by at %, W (tungsten) is added to the oxide semiconductor material, and the addition amount of W is within a compositional ratio of 0.07 to 3.8 at %.